C. A. Londos, E. N. Sgourou, A. Chroneos: search on Z-Library

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1

Impact of the germanium concentration in the stability of E-centers and A-centers in Si1−xGex

A. Chroneos, E. N. Sgourou, C. A. Londos

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2013

Language:

english

File:

PDF, 278 KB

english, 2013

2

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

C. A. Londos, E. N. Sgourou, A. Chroneos

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2013

Language:

english

File:

PDF, 419 KB

english, 2013

3

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

Chroneos, A., Londos, C. A., Sgourou, E. N., Vovk, R. V.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2014

Language:

english

File:

PDF, 244 KB

english, 2014

4

Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior

Londos, C. A., Sgourou, E. N., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2014

Language:

english

File:

PDF, 484 KB

english, 2014

5

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos, C. A., Sgourou, E. N., Hall, D., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2014

Language:

english

File:

PDF, 1.48 MB

english, 2014

6

VVandVO2defects in silicon studied with hybrid density functional theory

Christopoulos, S.-R. G., Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 490 KB

english, 2015

7

Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

Londos, C. A., Sgourou, E. N., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2014

Language:

english

File:

PDF, 270 KB

english, 2014

8

EngineeringVO, CiOiand CiCsdefects in irradiated Si through Ge and Pb doping

Londos, C. A., Angeletos, T., Sgourou, E. N., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 479 KB

english, 2015

9

Oxygen defect processes in silicon and silicon germanium

Chroneos, A., Sgourou, E. N., Londos, C. A., Schwingenschlögl, U.

Journal:

Applied Physics Reviews

Year:

2015

Language:

english

File:

PDF, 3.77 MB

english, 2015

10

Controlling A-center concentration in silicon through isovalent doping: mass action analysis

Christopoulos, S.-R. G., Parfitt, D. C., Sgourou, E. N., Londos, C. A., Vovk, R. V., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2016

Language:

english

File:

PDF, 519 KB

english, 2016

11

Relative concentrations of carbon related defects in silicon

Christopoulos, S.-R. G., Parfitt, D. C., Sgourou, E. N., Londos, C. A., Vovk, R. V., Chroneos, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2016

Language:

english

File:

PDF, 1.18 MB

english, 2016

12

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

13

The CiOi(SiI)2defect in silicon: density functional theory calculations

Christopoulos, S.-R. G., Sgourou, E. N., Angeletos, T., Vovk, R. V., Chroneos, A., Londos, C. A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2017

Language:

english

File:

PDF, 711 KB

english, 2017

14

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

Londos, C. A., Sgourou, E. N., Chroneos, A.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.21 MB

english, 2012

15

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

Sgourou, E. N., Timerkaeva, D., Londos, C. A., Aliprantis, D., Chroneos, A., Caliste, D., Pochet, P.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

16

A-centers in silicon studied with hybrid density functional theory

Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 506 KB

english, 2013

17

Impact of isovalent doping on radiation defects in silicon

Londos, C. A., Sgourou, E. N., Timerkaeva, D., Chroneos, A., Pochet, P., Emtsev, V. V.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

18

Doping strategies to control A-centres in silicon: insights from hybrid density functional theory

Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

Journal:

Physical Chemistry Chemical Physics

Year:

2014

Language:

english

File:

PDF, 2.12 MB

english, 2014

19

Interaction of n-type dopants with oxygen in silicon and germanium

Chroneos, A., Sgourou, E. N., Londos, C. A.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

20

Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

Londos, C. A., Aliprantis, D., Sgourou, E. N., Chroneos, A., Pochet, P.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 584 KB

english, 2012

21

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

A. Chroneos, C. A. Londos, E. N. Sgourou

Year:

2011

Language:

english

File:

PDF, 1.15 MB

english, 2011

22

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.34 MB

english, 2014

23

Erratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113, 113506 (2013)]

Sgourou, E. N., Timerkaeva, D., Londos, C. A., Aliprantis, D., Chroneos, A., Caliste, D., Pochet, P.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 450 KB

english, 2013

24

Production and evolution of A-centers in n-type Si1−xGex

Sgourou, E. N., Andrianakis, A., Londos, C. A., Chroneos, A.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 792 KB

english, 2013

25

Point defect engineering strategies to suppress A-center formation in silicon

Chroneos, A., Londos, C. A., Sgourou, E. N., Pochet, P.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 360 KB

english, 2011

26

Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

Londos, C A, Sgourou, E N, Chroneos, A, Emtsev, V V

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 141 KB

english, 2011

27

Vacancy-oxygen defects in p-type Si1−xGex

Sgourou, E. N., Londos, C. A., Chroneos, A.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.39 MB

english, 2014

28

Infrared study of defects in nitrogen-doped electron irradiated silicon

Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 1.52 MB

english, 2015

29

Carbon related defects in irradiated silicon revisited

Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

30

Impact of isovalent doping on the formation of the C i O i (Si I ) n defects in silicon

Christopoulos, S.-R.G., Sgourou, E.N., Vovk, R.V., Chroneos, A., Londos, C.A.

Journal:

Solid State Communications

Year:

2017

Language:

english

File:

PDF, 699 KB

english, 2017

31

Isovalent doping and the CiOi defect in germanium

Christopoulos, S.-R. G., Sgourou, E. N., Vovk, R. V., Chroneos, A., Londos, C. A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

32

The CO V defect in neutron irradiated silicon: An infrared spectroscopy study

Aliprantis, D.N., Antonaras, G., Angeletos, T., Sgourou, E.N., Chroneos, A., Londos, C.A.

Journal:

Materials Science in Semiconductor Processing

Year:

2018

Language:

english

File:

PDF, 445 KB

english, 2018

33

The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective

Christopoulos, Stavros-Richard, Sgourou, Efstratia, Vovk, Ruslan, Chroneos, Alexander, Londos, Charalampos

Journal:

Year:

2018

Language:

english

File:

PDF, 2.45 MB

english, 2018